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| BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 93C Marking RKs Pin Configuration 1=B 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS 3=C Package TSFP-3 Unit V Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150 mA mW C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Value 225 Unit K/W Jan-04-2002 BFR949F Electrical Characteristics Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 , VBE = 0 V Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 A ICBO 100 nA ICES 100 A V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 Jan-04-2002 BFR949F Electrical Characteristics Parameter AC Characteristics Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = vbe = 0 Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = vbe = 0 Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = vcb = 0 Noise figure IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k-1) ), Gms = |S21 / S12| Symbol Values min. typ. max. 7 9 0.3 0.2 0.7 - Unit fT Ccb Cce Ceb F GHz pF dB 1 1.5 21 2.5 - Gms - Gma - 15.5 - dB |S21e|2 17 12 - dB 3 Jan-04-2002 BFR949F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 4.36 fA IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = . 30 1.998 41.889 1.569 0.823 291 8.77 1.336 1.048 1.39 0 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 120 0.152 33.322 0.063 20.766 0.101 0.568 0.00894 0 0.334 0 0.5 0.924 mA A deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.085 1.86 1.095 3.68 72.2 0.849 0.456 0.198 459 0.217 0.75 1.11 300 pF pA mA - V V fF V eV K All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: L1 = C4 C1 L2 B L3 C 0.556 0.657 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF L2 = L3 = C1 = C' B' Transistor Chip E' C2 = C3 = C4 = C5 = C6 = C6 C2 L1 C3 C5 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jan-04-2002 |
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